Dynamic random access memories (DRAMs) are key components in all computing systems that require large working memory. Due to the strong increase in data volume in many embedded applications, such as machine learning, image processing, autonomous systems, etc., DRAMs largely impact the overall system performance and power consumption. In many of these applications, the overall system performance is often limited by the memory bandwidth or latency and not by the computation itself. Due to the dynamic storage scheme of DRAMs and shrinking technology nodes, reliability is also a major concern in current and future DRAMs.
How does the transistor charge the storage capacitor in a DRAM and what circuitry is required for each memory bit?
A voltage is applied to the transistor in the DRAM cell. The voltage is then given a data value. It is then placed on a bit-line. This, in turn, charges the storage capacitor.
DRAM will store bits of data in what’s called a storage, or memory cell, consisting of a capacitor and a transistor. The storage cells are typically organized in a rectangular configuration. When a charge is sent through a column, the transistor at the column is activated.
Why is it recommended to turn off a digital device for a full minute before restarting the device again?
Shutting down your digital device can help it run more smoothly by eliminating memory leaks. A memory leak occurs when an app requires a certain amount of memory in order to work, but fails to free up this memory when it is no longer needed.